ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,666, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Non-volatile memory device and a method of operating the same" was invented by Ilho Myeong (Suwon-si, South Korea), Kwangsoo Kim (Suwon-si, South Korea) and Suseong Noh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a memory device, the method including: applying a program inhibition voltage to an unselected bit line in a first program loop of a plurality of program loops; applying a program permission voltage to a selected bit line in the first program loop; applying a pass voltage to an unselected word line in...