US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Hybrid element substrate and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,509, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Hybrid element substrate and method of fabricating the same" was invented by Kyungwook Hwang (Seoul, South Korea), Junsik Hwang (Hwaseong-si, South Korea), Dongho Kim (Seoul, South Korea), Hyunjoon Kim (Seoul, South Korea), Joonyong Park (Suwon-si, South Korea) and Seogwoo Hong (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of fabricating a hybrid element substrate, the method including forming a plurality of first elements on a first substrate which is a silicon substrate or a silicon-on-insulator (SOI) substra...