ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,763, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device including global power rails and memory system having the same" was invented by Sanghak Shin (Seoul, South Korea) and Woongdai Kang (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first power supply unit configured to, in a normal mode of a high frequency operation, supply a first power from a first global power rail to a third global power rail and a fourth global power rail in a normal mode, and, in a standby mode of a high frequency option, supply the first power...