ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,776, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device for controlling shielding bit lines" was invented by Junhee Cho (Suwon-si, South Korea), Incheol Nam (Suwon-si, South Korea), Kyuchang Kang (Suwon-si, South Korea), Sangyun Kim (Suwon-si, South Korea), Sunyoung Kim (Suwon-si, South Korea), Jongwook Park (Suwon-si, South Korea), Hoseok Lee (Suwon-si, South Korea) and Kangsub Jeong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, a sense amplifier, a voltage generation circuit and a control circuit. The memory cell array includes ...