US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Wet atomic layer etching method and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,956, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Wet atomic layer etching method and method of manufacturing the same" was invented by Seungho Hahn (Suwon-si, South Korea), Wooyoung Kim (Suwon-si, South Korea), Minwoo Rhee (Suwon-si, South Korea), Bumki Moon (Suwon-si, South Korea) and Kyeongbin Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes preparing a first substrate and a second substrate respectively including a bonding layer having metal pads and a dielectric layer, performing a planarization process on a surface of...