ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,646, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Vertical memory structure comprising a contact plug electrically connected to a lower circuit pattern" was invented by Heesuk Kim (Suwon-si, South Korea), Seungyoon Kim (Suwon-si, South Korea), Yejin Park (Suwon-si, South Korea), Inhwan Baek (Suwon-si, South Korea) and Jongseon Ahn (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a lower circuit pattern disposed on a substrate; a common source plate (CSP) disposed on the lower circuit pattern; a channel connection pattern disposed on the CSP; a sacrific...