ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,635, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device" was invented by Hyun Geun Choi (Suwon-si, South Korea), Seok Han Park (Suwon-si, South Korea), Bo Won Yoo (Suwon-si, South Korea), Ki Seok Lee (Suwon-si, South Korea) and Jin Woo Han (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a peri-gate structure on a substrate, a first bonding pad on the peri-gate structure, a shielding conductive pattern on the first bonding pad, a second bonding pad between the shielding conductive pattern and the first bonding pad and contac...