US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Method of manufacturing semiconductor device including double patterning process" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,832, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of manufacturing semiconductor device including double patterning process" was invented by Inoue Naoki (Suwon-si, South Korea), Tsunehiro Nishi (Suwon-si, South Korea) and Yonghoon Moon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns o...