ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,387, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Memory device using data latch" was invented by Seo-Hyun Shin (Suwon-si, South Korea), Kyungduk Lee (Suwon-si, South Korea), Daehyeon Jo (Suwon-si, South Korea) and Youngsik Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array configured to include a first memory cell for storing user data and a second memory cell for a column repair of the first memory cell; a page buffer circuit configured to include a first page buffer connected to the first memory cell and a second page buffer connected ...