ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,955, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit device and method of manufacturing the same" was invented by Haram Ko (Suwon-si, South Korea), Young Ha Kim (Suwon-si, South Korea), Hyunjae Kang (Suwon-si, South Korea), Jinman Kim (Suwon-si, South Korea) and Jonggu Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a first semiconductor substrate having a frontside surface and a backside surface, a front-end-of-line (FEOL) structure on the frontside surface of the first semiconductor substrate, the FEOL structure including a ...