US Patent Issued to SAMSUNG ELECTRONICS on Oct. 27 for "Chalcogenide-based memory material, and memory device and electronic apparatus including the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,852, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Chalcogenide-based memory material, and memory device and electronic apparatus including the same" was invented by Hajun Sung (Suwon-si, South Korea), Minwoo Choi (Suwon-si, South Korea), Youngjae Kang (Suwon-si, South Korea), Kiyeon Yang (Suwon-si, South Korea) and Changseung Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A chalcogenide-based memory material may include a ternary semiconductor compound having a composition represented by XaY'bSec, wherein the chalcogenide-based memory material may have an ovonic threshold-swi...