ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,435, issued on Oct. 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jongmin Kim (Suwon-si, South Korea), Chansic Yoon (Suwon-si, South Korea) and Kiseok Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include first and second active patterns, first and second gate structures, a source/drain layer, a bit line structure, a contact plug structure, and a capacitor. The first and second active patterns are on a cell region and a peripheral circuit region of a substrate, respectively. The first gate structure extends through an upper porti...