ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,390, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor substrate, semiconductor device including the same, and method for fabricating the same" was invented by Sungmin Kim (Seongnam-si, South Korea), Yeon Sook Kim (Hwaseong-si, South Korea) and Yoon-Hee Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes a base substrate, a first epitaxial layer having a first conductivity type on the base substrate, a second epitaxial layer having the first conductivity type on the first epitaxial layer, a first well region having a second conductivity type dif...