ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,252, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor memory device and method for manufacturing the same" was invented by Jooncheol Kim (Suwon-si, South Korea) and Kang-Uk Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including a substrate including a cell area and a peripheral area around the cell area, a cell area isolation film in the substrate and defining the cell area, a bit-line structure in the cell area, a peripheral gate structure in the peripheral area of the substrate, the peripheral gate structure including a peripheral gat...