US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,266, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor memory device" was invented by Ah Rang Choi (Hwaseong-si, South Korea), Chan-Sic Yoon (Anyang-si, South Korea), Jung-Hoon Han (Hwaseong-si, South Korea), Gyu Hyun Kil (Hwaseong-si, South Korea), Weon Hong Kim (Suwon-si, South Korea) and Doo San Back (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Inventive concepts relate to a semiconductor memory device. The semiconductor memory device comprising, a substrate comprising an NMOS region and a PMOS region, a first gate pattern the NMOS region of the substrate, and a second g...