ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,291, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor devices" was invented by Kang Lib Kim (Suwon-si, South Korea), Sungsu Moon (Suwon-si, South Korea), Seahoon Lee (Suwon-si, South Korea) and Junhee Lim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate electrode structure, a memory channel structure, and first and second contact plugs. The gate electrode structure includes gate electrodes spaced apart from each other in a first direction, and each of the gate electrodes extends in a second direction. The gate electrode structure has a st...