ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,302, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including chalcogen compound and semiconductor apparatus including the same" was invented by Wooyoung Yang (Suwon-si, South Korea), Bonwon Koo (Suwon-si, South Korea), Chungman Kim (Suwon-si, South Korea), Kwangmin Park (Seoul, South Korea), Hajun Sung (Hwaseong-si, South Korea), Dongho Ahn (Hwaseong-si, South Korea), Changseung Lee (Yongin-si, South Korea) and Minwoo Choi (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switchi...