US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including a conductive filling pattern self-aligned to adjacent gate structures" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,258, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including a conductive filling pattern self-aligned to adjacent gate structures" was invented by Jongmin Kim (Suwon-si, South Korea), Taejin Park (Suwon-si, South Korea), Chansic Yoon (Suwon-si, South Korea), Kiseok Lee (Suwon-si, South Korea) and Hongjun Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pattern on a substrate, a gate structure, a conductive filling pattern and a bit line structure on the conductive filling pattern. The gate structure extends through an up...