US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including a channel layer including a two-dimensional (2D) semiconductor material" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,345, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including a channel layer including a two-dimensional (2D) semiconductor material" was invented by Sung Il Park (Suwon-si, South Korea), Min Jun Lee (Suwon-si, South Korea) and Jae Hyun Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device including a first channel layer on a substrate, and a second channel layer on the first channel layer, the first and second channel layers extending in a first direction while being spaced apart from the substrate, and including a 2D semiconducto...