US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device including 3D-stacked field-effect transistors having isolation structure between contact plugs" (New York, Virginia Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,347, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including 3D-stacked field-effect transistors having isolation structure between contact plugs" was invented by Myunghoon Jung (Clifton Park, N.Y.), Panjae Park (Halfmoon, N.Y.), Jaejik Baek (Watervliet, N.Y.), Seungchan Yun (Waterford, N.Y.), Myung Yang (Niskayuna, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a 3DSFET device which includes: a 1st source/drain region; a 2nd source/drain region, above the 1st source/drain region, having a smaller width...