US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Nonvolatile memory devices, storage devices including the same, and methods of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,838, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Nonvolatile memory devices, storage devices including the same, and methods of operating the same" was invented by Minjeong Heo (Suwon-si, South Korea), Jaehue Shin (Suwon-si, South Korea), Daeseok Byeon (Suwon-si, South Korea) and Yongsung Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a plurality of tri-state latches, a sensing node circuit configured to electrically couple a sensing node therein to a bitline of the memory device, a transfer node circuit configured to electrically couple a tra...