ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,862, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Memory device including reference resistance" was invented by Daeshik Kim (Suwon-si, South Korea) and Suho Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a plurality of memory cells and divided into a first region and a second region, a sensing circuit configured to determine data stored in memory cells of the first region based on a reference resistance, and a mismatch correction circuit configured to shift a value of the reference resistance depending on a temperature and co...