US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device including ferroelectric cell capacitor and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,799, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device including ferroelectric cell capacitor and operating method thereof" was invented by Hwayeong Lee (Suwon-si, South Korea) and Seulji Song (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An operating method of a memory device includes, during a write operation, in a first time period, pre-charging a bit line connected to a memory cell with a ground voltage, during the write operation, in a second time period, applying a word line driving voltage to a word line corresponding to the bit line, in the second time period, applyi...