US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device, operation method of memory device, and page buffer included in memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,789, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device, operation method of memory device, and page buffer included in memory device" was invented by Yongsung Cho (Hwaseong-si, South Korea), Min Hwi Kim (Suwon-si, South Korea) and Ji-Sang Lee (Iksan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory device which includes a memory cell array including memory cells, data latches connected with a sensing node and storing data in a first memory cell of the memory cells, a sensing latch connected with the sensing node, a temporary storage node, a switch connected betwee...