US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Lithography model simulation method, photomask generating method using the same, and semiconductor device fabrication method using the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,783,759, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Lithography model simulation method, photomask generating method using the same, and semiconductor device fabrication method using the same" was invented by Han Veen Koh (Suwon-si, South Korea), Soo Yong Lee (Suwon-si, South Korea), Moo-Joon Shin (Suwon-si, South Korea) and Kyoung Yoon Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a lithography model simulation method. The method comprises receiving a first mask image, generating a second mask image by simulating an optical model on the first mask image, generating...