US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Integrated circuit devices including stacked transistors and methods of forming the same" (New York, Virginia Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,742, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Integrated circuit devices including stacked transistors and methods of forming the same" was invented by Jintae Kim (Clifton Park, N.Y.), Keumseok Park (Slingerlands, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices may include a power switch cell including an upper transistor on a substrate and a lower transistor between the substrate and the upper transistor. The upper transistor may include an upper channel region, first and second upper source/drain regions, and an upper gate electrode on the upper...