US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Image sensor with reduced leakage current" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,464, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Image sensor with reduced leakage current" was invented by Hyunpil Noh (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor may include; a semiconductor substrate including a first surface and a second surface, and further including a photoelectric conversion region, a buried gate structure disposed in a buried gate trench extending into the semiconductor substrate from the first surface of the semiconductor substrate, a floating diffusion region disposed on one side of the buried gate structure in the semiconductor substr...