US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Bit-line sense amplifier and semiconductor memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,810, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Bit-line sense amplifier and semiconductor memory device including the same" was invented by Kyuseok Lee (Suwon-si, South Korea) and Hyunju Sung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a bit-line sense amplifier that includes an amplifying circuit connected to a bit-line, a complementary bit-line, a sensing bit-line, a complementary sensing bit-line, an offset cancellation circuit, an equalizer and an isolation circuit. The offset cancellation circuit connects the bit-line and the complemen...