ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,999, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Variable resistance memory device" was invented by Youngjin Cho (Suwon-si, South Korea), Seyun Kim (Seoul, South Korea), Yumin Kim (Seoul, South Korea), Doyoon Kim (Hwaseong-si, South Korea), Jinhong Kim (Seoul, South Korea) and Soichiro Mizusaki (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variable resistance memory device includes a support layer including an insulating material; a variable resistance layer on the support layer and including a variable resistance material; a capping layer between the support layer and the variab...