US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor devices having variously-shaped source/drain patterns" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,015, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices having variously-shaped source/drain patterns" was invented by Hyun-Kwan Yu (Suwon-si, South Korea) and Min-Hee Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprising a plurality of active patterns on a substrate. The semiconductor device may include a device isolation layer defining the plurality of active patterns, a gate electrode extending across the plurality of active patterns, and a source/drain pattern on the active patterns. The plurality of active patterns may comprise a firs...