US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Low complexity direct-to-LUT digital pre-distortion method" (British Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,013, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Low complexity direct-to-LUT digital pre-distortion method" was invented by Paul Nicholas Fletcher (Impington, Great Britain), Donghan Kim (Cambridge, Great Britain), Fei Tong (Bassingbourn, Great Britain) and Ziming He (Barnet, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A distortion apparatus for a power amplifier comprises: pre-distortion circuitry that comprises a memory polynomial look-up-table (LUT) circuit; and post-distortion circuitry that updates the pre-distortion circuitry based on an output of the power amplifier. The pre-distorti...