ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,771, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device and method of fabricating the same" was invented by Beom Seo Kim (Suwon-si, South Korea), Bo Ram Gu (Namyangju-si, South Korea), Ja Min Koo (Hwaseong-si, South Korea), Sung Gil Kim (Yongin-si, South Korea) and Jong Hyeok Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate including an active area defined by an element separation layer, the active area including a first portion and second portions defined on both sides of the first portion a bit line crossi...