US Patent Issued to SAMSUNG ELECTRONICS on May 26 for "Semiconductor devices including a contact plug structure on a metal silicide layer" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,778, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices including a contact plug structure on a metal silicide layer" was invented by Eunbin Seon (Yongin-si, South Korea), Jonghyun Kim (Hwaseong-si, South Korea), Hyunjung Lee (Suwon-si, South Korea) and Dohyung Kim (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a metal silicide layer on a substrate, and a contact plug structure on the metal silicide layer. The contact plug structure includes a metal pattern including a first metal, and a first barrier pattern covering a lower surface ...