ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,776, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including channel pattern and method for manufacturing the same" was invented by Sanghoon Uhm (Suwon-si, South Korea) and Min Hee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; a bit line above the substrate; a channel pattern on the bit line extending in a direction perpendicular to an upper surface of the bit line; a word line intersecting the bit line and spaced apart from the channel pattern; a gate insulating pattern between the channel pattern and the word ...