ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,793, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device" was invented by Minho Kim (Seongnam-si, South Korea) and Hyunmook Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device including a first semiconductor structure including a first semiconductor substrate, a memory cell area including a plurality of memory cells disposed on the first semiconductor substrate, and a first metal pad disposed on the memory cell area; a second semiconductor structure including a second semiconductor substrate, a page buffer disposed on the second semicondu...