US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Three-dimensional non-volatile memory device including horizontal channel region" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,142, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional non-volatile memory device including horizontal channel region" was invented by Daewon Ha (Suwon-si, South Korea), Kyunghwan Lee (Suwon-si, South Korea) and Hyunmog Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional non-volatile memory device includes a memory cell array including a plurality of memory cells repeatedly arranged in a first lateral direction, a second lateral direction, and a vertical direction on a substrate. The first lateral direction and the second lateral direction are parallel...