US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Semiconductor device including gate structure" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,130, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including gate structure" was invented by Hyebin Choi (Suwon-si, South Korea), Chansic Yoon (Anyang-si, South Korea) and Gyuhyun Kil (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region, a gate dielectric layer disposed on the active region, a gate electrode disposed on the gate dielectric layer, a protective layer in contact with a portion of a side surface of the gate electrode, and a spacer structure covering the side surface of the gate electrode and the protective ...