US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,123, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Jinyoung Park (Anyang-si, South Korea), Sangwuk Park (Hwaseong-si, South Korea), Hyun-Chul Yoon (Seongnam-si, South Korea) and Jungpyo Hong (Gwangmyeong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes active sections that include first and second impurity regions and are defined by a device isolation layer. Word lines extend in a first direction on the active sections. Intermediate dielectric patterns cover top surfaces of the word l...