US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Power gating circuit and a semiconductor chip including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,912, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Power gating circuit and a semiconductor chip including the same" was invented by Jinook Jung (Suwon-si, South Korea), Jaewoo Park (Suwon-si, South Korea), Myoungbo Kwak (Suwon-si, South Korea) and Junghwan Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power gating circuit including: a power gating transistor; a gate bias generating circuit configured to provide a gate bias control signal to the gate of the power gating transistor; and a body bias generating circuit configured to provide a body bias control signal to the body o...