US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Method of forming a pattern of semiconductor device of a semiconductor device on a semiconductor substrate by using an extreme ultraviolet mask" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,482, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of forming a pattern of semiconductor device of a semiconductor device on a semiconductor substrate by using an extreme ultraviolet mask" was invented by Kisung Kim (Seoul, South Korea) and Sangoh Park (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a pattern of a semiconductor device includes: preparing a semiconductor substrate including a cell region and an outer region; applying a photoresist on the semiconductor substrate; irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the...