US Patent Issued to SAMSUNG ELECTRONICS on May 12 for "Semiconductor memory device having stacked word lines including sub-gate electrodes" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,331, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device having stacked word lines including sub-gate electrodes" was invented by Hyungeun Choi (Suwon-si, South Korea), Kiseok Lee (Suwon-si, South Korea), Haejoon Lee (Suwon-si, South Korea) and Seungjae Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a lower layer including a first region and a second region, the lower layer extending in a first direction and a second direction perpendicular to the first direction, and a stack including word lines and interlayer insula...