ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,371, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of manufacturing the semiconductor device" was invented by Choongsun Kim (Suwon-si, South Korea), Shigenobu Maeda (Seongnam-si, South Korea) and Myoungkyu Park (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active fin protruding from a substrate, extending in a first direction, and defined by a device isolation layer. Gate structures intersect the active fin and extend in a second direction. Each of the gate structures includes a gate and gate spacers on side surfaces ...