ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,330, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Junhyeok Ahn (Suwon-si, South Korea), Hyosub Kim (Seoul, South Korea) and Sohyun Park (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an active area and a non-active area. An extra pad layer is disposed on the active area of the substrate. A first contact layer is disposed in a contact hole defined inside the substrate from a surface of the extra pad layer. A first silicide layer is disposed on both sidewalls of the first contact layer. A buried insula...