US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Semiconductor transistor device including backside contact structure vertically between backside power rail and source/drain structure and method of forming thereof" (New York, Virginia Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,674, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Semiconductor transistor device including backside contact structure vertically between backside power rail and source/drain structure and method of forming thereof" was invented by Jongjin Lee (Clifton Park, N.Y.), Jaejik Baek (Watervliet, N.Y.), Myunghoon Jung (Clifton, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of manufacturing an integrated circuit device. The method includes forming a semiconductor device, wherein the semiconductor device has one or more source/drain structures, one or more cha...