US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Semiconductor memory device of 2T-1C structure and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,431, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor memory device of 2T-1C structure and method of fabricating the same" was invented by Kyunghwan Lee (Seoul, South Korea), Yongseok Kim (Suwon-si, South Korea), Hyuncheol Kim (Seoul, South Korea), Jongman Park (Hwaseong-si, South Korea), Dongsoo Woo (Seoul, South Korea) and Minjun Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include first and second bit lines spaced apart from each other, an interlayer insulating layer covering the first and second bit lines and including a groove...