ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,440, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including single crystal semiconductor pattern with complementary structure" was invented by Jeonil Lee (Suwon-si, South Korea), Kyunghwan Lee (Suwon-si, South Korea) and Min Hee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region...