US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Semiconductor device including channel structure comprising different compositions" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,474, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device including channel structure comprising different compositions" was invented by Junhwa Song (Suwon-si, South Korea), Changsik Kim (Suwon-si, South Korea), Jaewon Na (Suwon-si, South Korea) and Deokhwan Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an upper conductive line on a substrate, a channel structure adjacent the upper conductive line, a gate dielectric film between the channel structure and the upper conductive line, and a conductive contact pattern electrically conn...