US Patent Issued to SAMSUNG ELECTRONICS on March 31 for "Method of fabricating memory device including magnetic tunnel junctions with insulating sidewalls" (South Korean Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,613, issued on March 31, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of fabricating memory device including magnetic tunnel junctions with insulating sidewalls" was invented by Manjin Eom (Hwaseong-si, South Korea), Gawon Lee (Suwon-si, South Korea), Seungpil Ko (Hwaseong-si, South Korea) and Kilho Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a memory device includes sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other; forming a magnetic tunnel junction structure by patterning the first mag...