ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,620, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device including nitride spacers" was invented by Jeeyong Kim (Hanam-si, South Korea) and Junghwan Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprising: a substrate; an electrode structure disposed on the substrate while extending in a first direction, the electrode structure including a plurality of electrodes stacked in a second direction which is a vertical direction of the substrate; a bit line disposed on the electrode structure; vertical structures extending through the electrode struc...