US Patent Issued to SAMSUNG ELECTRONICS on March 3 for "Semiconductor device including a capacitor structure with a dielectric layer structure" (South Korean Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,629, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including a capacitor structure with a dielectric layer structure" was invented by Jungmin Park (Seoul, South Korea) and Hanjin Lim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor disposed on a substrate; and a capacitor structure electrically connected to the transistor, wherein the capacitor structure includes a first electrode; a dielectric layer structure disposed on the first electrode; and a second electrode disposed on the dielectric layer structure, the dielectric ...